This program will calculate the following parameters in the CMOS circuit configuration: K (n-type), K (p-type), KR (Ratio), ID, V IL, V IH, V OL, V OHNMH, N ML, TPHL, TP LH, TP and the Region of Operation. Enter VDD in Volts:   Enter Vtn in Volts:   Enter Vtp in Volts:   Enter tox(n-type) in µ A / V 2:   Enter tox(p-type) in µ A / V 2:   Enter W(n-type) in µ meter:   Enter L(n-type) in µ meter:   Enter W(p-type) in µ meter:   Enter L(p-type) in µ meter:   Enter Cj in Pico Farad:   Enter a Relational Constant:   Where: VDD: Power Supply Vtn: NMOS threshold voltage Vtp: PMOS threshold voltage TOX(n-type): NMOS Oxide Thickness TOX(p-type): PMOS Oxide Thickness W(n-type): NMOS implant width L(n-type): NMOS implant length  W(p-type): PMOS implant width L(p-type): PMOS implant length  Cj: Capacitance diffusion junction Relational Constant: A number to relate the total implant capacitance with Cj under a specific voltage